MOSFET Transistor Array CD4007 Parameters – Level 8 Spice Models with LTSpice Files

Level 8 MOSFET models for the PMOS and NMOS FETs in the CD4007 mosfet array chip courtesy of Dr Lynn Fuller of R.I.T.

• LTSpice Schematic file – All the model parameters are included as spice directives on the schematic so this should be portable and run right out of the box on your machine.  
• Plot Specification file – goes with the schematic file and plots the I-V characteristic of the PMOS FET and gm/Id which allows the specific current to be calculated

Research Links  RIT Model

• RIT4007N8  
• LTspice IV: Adding Third-Party Models
• Spice Model Parameters for RIT  Local Copy
• Spice MOSFET Parameter Calculator  Local Copy

Research Links

• Specs for 4007 MOSFET Array
• PDF with many 4007 layout specs: Page 18
• Level 1 Spice Model
• Foty-1987 – has some physical parameters of 4007
• Foty-1989
• Greg Flewelling model
• Level 1 CD4007 Model
• Cadence based laboratory project for fitting model parameters to match 4007

From Foty 1987: Device parameters for this version of the CD4007 are:

• W = 190 pm
•  L = 4.0 pm
• tOx =1200 A
• NA = 2.8 X 10^16 (boron).

From Foty 1989: Device parameters for this version of the CD4007 are: 

• W = 495 pm
• L = 6.35 pm
• to = 120 nm
• ND = 3.0 X lOI5 (phosphorus)