MOSIS PARAMETRIC TEST RESULTS
RUN: N99Y VENDOR: TSMC
TECHNOLOGY: SCN025 FEATURE SIZE: 0.25 microns
INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: TSMC 025SPPM.
TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS
MINIMUM 0.36/0.24
Vth 0.56 -0.53 Volts
SHORT 20.0/0.24
Idss 590 -263 uA/um
Vth 0.60 -0.59 Volts
Vpt 7.6 -7.2 Volts
WIDE 20.0/0.24
Ids0 13.1 -1.7 pA/um
LARGE 20.0/20.0
Vth 0.52 -0.63 Volts
Vjbkd 6.1 -7.0 Volts
Ijlk -22.9 -7.5 pA
Gamma V^0.5
K' (Uo*Cox/2) 109.7 -25.5 uA/V^2
COMMENTS: Poly bias varies with design technology. To account for mask and
etch bias use the appropriate value for the parameter XL in your
SPICE model card.
Design Technology XL
----------------- -------
SCN5M_DEEP (lambda=0.12) 0.03
thick oxide, NMOS 0.02
thick oxide, PMOS -0.03
TSMC25 0.03
thick oxide, NMOS 0.03
thick oxide, PMOS 0.03
SCN3M_SUBM (lambda=0.15) -0.03
thick oxide, NMOS 0.02
thick oxide, PMOS -0.03
FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >15.0 <-15.0 Volts
PROCESS PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 MTL4 UNITS
Sheet Resistance 4.7 3.4 4.1 0.08 0.07 0.07 0.07 ohms/sq
Width Variation 0.09 0.14 0.12 0.08 0.03 0.01 -0.03 microns
(measured - drawn)
Contact Resistance 6.9 6.0 5.8 2.04 4.06 5.72 ohms
Gate Oxide Thickness 57 angstrom
PROCESS PARAMETERS MTL5 N_WELL UNITS
Sheet Resistance 0.03 1214 ohms/sq
Width Variation 0.08 microns
(measured - drawn)
Contact Resistance 7.52 ohms
CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 MTL4 MTL5 N_WELL UNITS
Area (substrate) 1727 1888 97 37 19 13 8 8 63 aF/um^2
Area (N+active) 6042 50 20 14 11 9 aF/um^2
Area (P+active) 5796 aF/um^2
Area (poly) 61 18 10 7 6 aF/um^2
Area (metal1) 39 15 9 7 aF/um^2
Area (metal2) 37 15 9 aF/um^2
Area (metal3) 38 15 aF/um^2
Area (metal4) 38 aF/um^2
Fringe (substrate) 417 317 21 57 54 51 24 aF/um
Fringe (poly) 67 39 29 24 21 aF/um
Fringe (metal1) 49 33 27 24 aF/um
Fringe (metal2) 53 34 29 aF/um
Fringe (metal3) 53 35 aF/um
Fringe (metal4) 59 aF/um
CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 1.05 Volts
Vinv 1.5 1.13 Volts
Vol (100 uA) 2.0 0.22 Volts
Voh (100 uA) 2.0 2.07 Volts
Vinv 2.0 1.19 Volts
Gain 2.0 -16.66
Ring Oscillator Freq.
DIV1024_T (31-stage,2.5) 168.69 MHz
DIV1024 (31-stage,2.5) 299.76 MHz
Ring Oscillator Power
DIV1024_T (31-stage,2.5) 0.06 uW/MHz/g
DIV1024 (31-stage,2.5) 0.06 uW/MHz/g
COMMENTS: DEEP_SUBMICRON
N99Y SPICE BSIM3 VERSION 3.1 PARAMETERS
SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8
* DATE: Dec 6/99
* LOT: n99y WAF: 10
* Temperature_parameters=Default
.MODEL CMOSN NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 5.7E-9
+XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.4365497
+K1 = 0.3915623 K2 = 0.0175145 K3 = 1E-3
+K3B = 2.6588343 W0 = 1E-7 NLX = 1.111465E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = -0.0408321 DVT1 = 0.0746768 DVT2 = 0.307109
+U0 = 407.1177485 UA = 9.442714E-11 UB = 1.092986E-18
+UC = 1.63196E-11 VSAT = 1.365087E5 A0 = 1.3189329
+AGS = 0.2711719 B0 = 3.291713E-8 B1 = -1E-7
+KETA = 4.645753E-3 A1 = 0 A2 = 1
+RDSW = 439.9558234 PRWG = 0.0345487 PRWB = -0.0441065
+WR = 1 WINT = 1.645705E-9 LINT = 1.116516E-9
+XL = 3E-8 XW = 0 DWG = -1.494138E-9
+DWB = 1.459097E-8 VOFF = -0.1026054 NFACTOR = 0.1344887
+CIT = 0 CDSC = 1.527511E-3 CDSCD = 0
+CDSCB = 0 ETA0 = 1.930311E-3 ETAB = 2.946158E-4
+DSUB = 0.0214865 PCLM = 1.3387947 PDIBLC1 = 0.480652
+PDIBLC2 = 9.034986E-3 PDIBLCB = -1E-3 DROUT = 0.5593223
+PSCBE1 = 9.843289E9 PSCBE2 = 2.10878E-9 PVAG = 1.0033136
+DELTA = 0.01 MOBMOD = 1 PRT = 0
+UTE = -1.5 KT1 = -0.11 KT1L = 0
+KT2 = 0.022 UA1 = 4.31E-9 UB1 = -7.61E-18
+UC1 = -5.6E-11 AT = 3.3E4 WL = 0
+WLN = 1 WW = -1.22182E-16 WWN = 1.2127
+WWL = 0 LL = 0 LLN = 1
+LW = 0 LWN = 1 LWL = 0
+CAPMOD = 2 XPART = 0.4 CGDO = 3.11E-10
+CGSO = 3.11E-10 CGBO = 1E-11 CJ = 1.758521E-3
+PB = 0.99 MJ = 0.457547 CJSW = 4.085057E-10
+PBSW = 0.8507757 MJSW = 0.3374073 PVTH0 = 7.147521E-5
+PRDSW = -67.2161633 PK2 = -1.344599E-3 WKETA = 3.035972E-3
+LKETA = -9.0406E-3 LAGS = -0.3012 )
*
.MODEL CMOSP PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 5.7E-9
+XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.6586391
+K1 = 0.5199897 K2 = 0.0357513 K3 = 0
+K3B = 15.5613889 W0 = 1E-6 NLX = 1E-9
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 2.6100181 DVT1 = 0.4363142 DVT2 = -0.042436
+U0 = 196.024903 UA = 2.767112E-9 UB = 1.90709E-18
+UC = 6.166867E-11 VSAT = 1.975064E5 A0 = 0.2398712
+AGS = 0.0943234 B0 = 3.21184E-6 B1 = 5E-6
+KETA = 0.0312217 A1 = 0 A2 = 1
+RDSW = 997.072701 PRWG = -0.1916111 PRWB = -0.495
+WR = 1 WINT = 2.527293E-9 LINT = 1.254514E-8
+XL = 3E-8 XW = 0 DWG = -3.253948E-8
+DWB = 4.92072E-8 VOFF = -0.15 NFACTOR = 1.5460516
+CIT = 0 CDSC = 1.413317E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 0.7241245 ETAB = -0.240523
+DSUB = 1.0813613 PCLM = 2.0772083 PDIBLC1 = 4.31459E-4
+PDIBLC2 = 0.0252121 PDIBLCB = -9.960722E-4 DROUT = 0.0432774
+PSCBE1 = 3.191047E10 PSCBE2 = 1.323218E-8 PVAG = 0.0420525
+DELTA = 0.01 MOBMOD = 1 PRT = 0
+UTE = -1.5 KT1 = -0.11 KT1L = 0
+KT2 = 0.022 UA1 = 4.31E-9 UB1 = -7.61E-18
+UC1 = -5.6E-11 AT = 3.3E4 WL = 0
+WLN = 1 WW = 0 WWN = 1
+WWL = 0 LL = 0 LLN = 1
+LW = 0 LWN = 1 LWL = 0
+CAPMOD = 2 XPART = 0.4 CGDO = 2.68E-10
+CGSO = 2.68E-10 CGBO = 1E-11 CJ = 1.902493E-3
+PB = 0.9810285 MJ = 0.4644362 CJSW = 3.142741E-10
+PBSW = 0.9048624 MJSW = 0.3304452 PVTH0 = 4.952976E-3
+PRDSW = 29.8169373 PK2 = 3.383373E-3 WKETA = -7.913501E-3
+LKETA = -0.0208318 )
*
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