Resistivity of a plain old block of silicon

What is a MOSFET but a plain old block of silicon with some terminals printed on it.  I start here with the most basic of components. Here are the relevant points:

•  I want to think about N channel MOSFET so I start with P type material doped at Na=10^16 cm^-3
• Area = A = 1cm x 1cm 
• Length = 429cm   I chose this because mobility of Boron doping @10^16 = 429cm^2 / V*S

Line of reasoning

• Apply 1 volt
• In 1 second the carriers travel 429cm and thus all the charge in the entire block is swept out and totally replaced. 
• Calculate R=V/I 
• Compare with value calculated from the page below

[pmath] Ncarriersinblock = L*A*Na [/pmath]

[pmath] Qtotalinblock = qL*A*Na [/pmath]

[pmath] Qtotalinblock = 1.6*10^16 * 429 * (1 * 1) * (1 *10^16) = 0.686 Coulomb[/pmath]

but this is the amount of charge swept out in 1 second from the silicon bar so 

[pmath] I = 0.686 Ampere[/pmath]

Remember 1 volt was applied to get the 429cm/second carrier velocity and thus

[pmath] R = 1/0.686= 1.45 Ampere[/pmath]   Which agrees with the calculated value from the first web link reference below.

Research Links

• Calculate Input doping, dopant type > compute resistivity 
• Resistivity, Sheet Resistance and Mobility Overview – This is a straight forward treatment that I should have read sooner!
• Mobility, Resistivity and sheet resistance