Electronics
MOSFET Transistor Array CD4007 Parameters – Level 8 Spice Models with LTSpice Files
Level 8 MOSFET models for the PMOS and NMOS FETs in the CD4007 mosfet array chip courtesy of Dr Lynn Fuller of R.I.T.
- LTSpice Schematic file – All the model parameters are included as spice directives on the schematic so this should be portable and run right out of the box on your machine.
- Plot Specification file – goes with the schematic file and plots the I-V characteristic of the PMOS FET and gm/Id which allows the specific current to be calculated
Research Links RIT Model
- RIT4007N8
- LTspice IV: Adding Third-Party Models
- Spice Model Parameters for RIT Local Copy
- Spice MOSFET Parameter Calculator Local Copy
Research Links
- Specs for 4007 MOSFET Array
- PDF with many 4007 layout specs: Page 18
- Level 1 Spice Model
- Foty-1987 – has some physical parameters of 4007
- Foty-1989
- Greg Flewelling model
- Level 1 CD4007 Model
- Cadence based laboratory project for fitting model parameters to match 4007
From Foty 1987: Device parameters for this version of the CD4007 are:
- W = 190 pm
- L = 4.0 pm
- tOx =1200 A
- NA = 2.8 X 10^16 (boron).
From Foty 1989: Device parameters for this version of the CD4007 are:
- W = 495 pm
- L = 6.35 pm
- to = 120 nm
- ND = 3.0 X lOI5 (phosphorus)
